Surface passivation and related technological developments on compound semiconductor materials
نویسندگان
چکیده
منابع مشابه
Compound semiconductor nanotube materials grown and fabricated
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...
متن کاملRecent Developments in Compound Semiconductor Microwave Power Transistor Technology
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs ...
متن کاملAlternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric
متن کامل
Technological developments in lipidomics.
Lipid analysis is a well-established field of research that focuses on one lipid or a few lipids. The recent developments in mass spectrometry technologies have enabled more comprehensive studies to be performed on lipids present in a sample. The move towards extensive lipid research has led to the coining of the term lipidomics, which is defined as the ensemble of lipids present in a sample. I...
متن کاملSurface Passivation Study on Gettered Multicrystalline Silicon
In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detect...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Electronics
سال: 1982
ISSN: 0020-7217,1362-3060
DOI: 10.1080/00207218208901399